BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Philips semiconductors bu25008df specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.

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Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. II Extension for repetitive pulse operation. Stress above one or more of the limiting values may cause permanent damage to the device. SOT; The seating plane is electrically isolated from all terminals. C I Region of permissible DC operation. This data sheet contains final product specifications. Refer to mounting instructions for F-pack envelopes. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.



This data sheet contains target or goal specifications for product development. Typical base-emitter saturation voltage. Buaf datasheet, equivalent, cross reference search.

Exposure to limiting values for extended periods may affect device reliability.

BUDF 데이터시트(PDF) – Tiger Electronic Co.,Ltd

Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. Typical collector storage and fall time. July 6 Rev 1. July 7 Rev 1. July 5 Vu2508df 1. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

BU2508DF Datasheet

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Buaf transistor equivalent substitute crossreference search.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.


July 2 Rev 1. Typical collector-emitter saturation voltage. Silicon diffused power transistor buaf general description hu2508df performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

No liability will be accepted by the publisher for any consequence of its use.

BUDF NTE Equivalent NTE NPN horizontal defle – Wholesale Electronics

C 1 Turn-off current. Typical DC current gain. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. High collectorbase voltagevcbov high speed switching. July 1 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Application information Where application information is given, it dwtasheet advisory and does not form part of the specification.