BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical capacitances, Ciss, Coss, Datasheey. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Measured from contact ddatasheet on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. New Product View Product Index. No liability will be accepted by the publisher for any consequence of dattasheet use. Typical turn-on gate-charge characteristics.

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This data sheet contains final product specifications. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Normalised continuous drain current.

Typical reverse diode current. Refer to mounting instructions for TO envelopes. Normalised drain-source on-state resistance. Normalised avalanche energy rating.

August 6 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. TOAB; pin 2 connected to mounting base. No liability will be accepted by the publisher for any consequence of its use.

Exposure to limiting values for extended periods may affect device reliability. This data sheet contains target or goal specifications for product development.

Typical turn-on gate-charge characteristics.

Normalised drain-source on-state resistance. Application information Where application information is given, it is advisory and does not form part of the specification. August 7 Rev 1.

BUKA, BG-ELECTRONICS BUKA, BUK, BUK

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Normalised avalanche energy rating. August 7 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device. August 6 Rev 1.

BUK455-200A

VDD August 5 Rev 1. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Stress above one dahasheet more of the limiting values may cause permanent damage to the device. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains datasbeet product specifications. Observe the general handling precautions for electrostatic-discharge datasheef devices ESDs to prevent damage to MOS gate oxide.

Normalised continuous drain current. C Philips Electronics N. Avalanche energy test circuit. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.